Herein, we prepare vertical and single crystalline silicon nanowires (SiNWs) via a one-step metal-assisted chemical etching method in aqueous NH₄HF₂/AgNO₃ solution. The effects of silicon substrate resistivity and concentrations of NH₄HF₂ and AgNO₃ on the etching process were examined. Two properties were studied, the morphology and the wettability of etched layers. The morphology of the silicon nanowire (SiNW) layers was investigated by scanning electron microscopy (SEM) while the wettability was studied by contact angle measurement system. It was established that the morphology is strongly influenced by etching parameters and their wettability changes from superhydrophilic to hydrophobic.

在这里，我们通过一步法在NH ₄ HF ₂ / AgNO ₃水溶液中进行金属辅助化学刻蚀方法制备垂直和单晶硅纳米线（SiNWs）。硅衬底电阻率和NH ₄ HF ₂和AgNO ₃浓度的影响对蚀刻工艺进行了检查。研究了两个特性，即蚀刻层的形态和润湿性。通过扫描电子显微镜（SEM）研究了硅纳米线（SiNW）层的形貌，同时通过接触角测量系统研究了润湿性。已经确定，形态受到蚀刻参数的强烈影响，并且其润湿性从超亲水性变为疏水性。