Low dielectric interlayer films have become an important element to ensure the development of the microelectronics industry. A kind of flexible interlayer dielectrics, polyarylene ether nitrile/bisphenol A cyanate ester (PEN/BADCy) film, with good thermal stability and low frequency dependence, has been developed by solution casting method. Herein, materials were designed to incorporate bisphenol A cyanate ester as a part of blend, contributing to the frequency stability and structural integrity. The morphological study combined with electron microscopy revealed the uniform and flexible microstructure information with controllable morphology through self-polymerization of cyanate esters with different prepolymerization time and curing temperatures. The dielectric films could present high thermal stability with T_g>180 °C. Significant improvement in the dielectric properties was achieved for the dielectric constant and loss was much stabler than neat PEN over the frequency range from 100 Hz to 5 MHz. When the prepolymerization time was 3 h and final curing temperature reached 230 °C, the dielectric constant and dielectric loss of the films were 3.36 and 0.013 at 100 kHz, respectively. The dimensional stability (CTE = 53.67 × 10⁻⁶ K⁻¹) was confirmed and considered beneficial to use as an interlayer dielectrics.

低介电夹层膜已成为确保微电子工业发展的重要元素。通过溶液流延法开发了一种具有良好的热稳定性和低频依赖性的柔性中间层电介质，聚亚芳基醚腈/双酚A氰酸酯（PEN / BADCy）薄膜。在本文中，设计材料以掺入双酚A氰酸酯作为共混物的一部分，从而有助于频率稳定性和结构完整性。形态学研究与电子显微镜相结合，揭示了通过不同预聚合时间和固化温度的氰酸酯的自聚合，可以得到均匀，灵活的微观结构信息，并且形态学可控。介电膜在T的作用下表现出高的热稳定性_g > 180°C。在100 Hz至5 MHz的频率范围内，介电常数的介电性能得到了显着改善，损耗比纯PEN稳定得多。当预聚合时间为3 h，最终固化温度达到230°C时，薄膜在100 kHz时的介电常数和介电损耗分别为3.36和0.013。确认尺寸稳定性（CTE ＝ 53.67×10 ^-6 K ^-1），认为适合用作层间电介质。