The influence of doping of waveguide layers on the output characteristics of lasers based on AlGaAs/GaAs double separate-confinement heterostructures is analysed. The heterostructures with narrow and broadened waveguides are studied. Samples of laser diode bars with undoped and doped waveguide layers are experimentally fabricated and compared. It is shown that the latter type of structures with a broadened waveguide allows one to increase the output power of the laser diode bars by 10% – 15%, all other conditions being equal.

中文翻译：

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波导掺杂对AlGaAs / GaAs激光器输出特性的影响

分析了波导层的掺杂对基于AlGaAs / GaAs双重分离约束异质结构的激光器输出特性的影响。研究了具有狭窄和加宽波导的异质结构。具有实验性地制造和比较了具有未掺杂和掺杂的波导层的激光二极管棒的样品。结果表明，后一种类型的具有较宽波导的结构可以使激光二极管棒的输出功率提高10％到15％，而其他所有条件都相同。