Using physics-based predictive technology CAD simulations, we show the improvements possible in device performance via strain engineering in vertically-stacked horizontal gate-all-around nanosheet Field-Effect transistors (NSFETs), which may outperform conventional FinFETs beyond 7 nm technology node. Effects of mechanical strain on NSFET variability is reported for the first time. We present a novel simulation approach for the analyses of random dopant fluctuation (RDF) and metal grain granularity (MGG) dependent variability in nanosheet transistors. The study encompasses topography simulation, which realistically reproduces a reported experimental nanosheet transistor. Device simulations are based on sub-band Boltzmann transport with 2D Schrdinger equation in the nanosheet cross-section and 1D Boltzmann transport along the nanosheet channel. The effects of mechanical stress and geometry dependence of the electrical characteristics are also reported. Critical design issues are outlined.

使用基于物理的预测技术 CAD 模拟，我们展示了通过应变工程在垂直堆叠的水平栅极全环纳米片场效应晶体管 (NSFET) 中可能提高器件性能的可能性，其性能可能超过 7 纳米技术节点的传统 FinFET。首次报道了机械应变对 NSFET 变异性的影响。我们提出了一种新的模拟方法，用于分析纳米片晶体管中随机掺杂波动 (RDF) 和金属颗粒粒度 (MGG) 相关的可变性。该研究包括形貌模拟，它真实地再现了报道的实验纳米片晶体管。器件模拟基于子带玻尔兹曼传输，纳米片横截面中的二维薛定谔方程和沿纳米片通道的一维玻尔兹曼传输。还报告了机械应力的影响和电气特性的几何相关性。概述了关键的设计问题。