This paper presents a non-volatile mechanical memory bit that uses a bistable beam that buckles into one of two stable positions. The beam buckles because of compressive stress that is applied by oxidizing the silicon beam. In order to process a wafer with a released, buckled beam, it was necessary to use a stencil mask for the last steps to minimize damage to the device. The stencil mask is used to the etch contact openings in the thermal oxide and to deposit metal for electrical connection. Parallel electrodes located close to the bistable beam are used to electrostatically write the bit value, and asymmetric piezoresistors located at each anchor point of the bistable beam are used to read the bit value. The design was optimized using simulations, and the relationship between the readout signal, beam length, and piezoresistor length were found. The measurements demonstrate that the memory bit is promising for non-volatile memory applications where its inherent radiation hardne...

中文翻译：

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使用非对称压敏电阻的屈曲梁机械存储器用于读出

本文提出了一种非易失性机械存储位，该位使用双稳态梁弯曲成两个稳定位置之一。由于氧化硅束会产生压缩应力，因此束会弯曲。为了处理具有释放的弯曲光束的晶片，在最后的步骤中必须使用模板掩模，以最大程度地减少对器件的损坏。模板掩膜用于蚀刻热氧化物中的接触孔并沉积金属以进行电连接。位于双稳态电子束附近的平行电极用于静电写入位值，位于双稳态电子束的每个锚点的非对称压敏电阻用于读取位值。使用仿真对设计进行了优化，发现了读出信号，射束长度和压敏电阻长度之间的关系。