This paper proposes a new breakdown-enhanced GaN MISFET with the architecture of double channel and P-buried layer, i.e. DCP-MISFET. The lower barrier and lower channel are connected with the drain, the lower two dimensional electron gas can improve the device electric field distribution between gate and drain, achieving an enhanced breakdown voltage (BV). At the same time, the P buried layer below the gate field plate can reduce the peak electric field around the gate field plate. The proposed simulated device with LGD=15 μm presents an excellent breakdown voltage of 2373 V. In addition, the ON-resistance (RON) of 15.07 Ω•mm and Baliga's figure of merit of 3.736 GW•cm-2 are achieved in the optimized DCP-MISFET. Compared with breakdown voltage 1547 V of the optimized field plate conventional GaN MISFET (FPC-MSIFET), the proposed device increases the breakdown voltage by 53.39% and the Baliga's figure of merit is enhanced by 133.89%.

中文翻译：

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具有 P 埋层的击穿增强型双通道 GaN MISFET 的 TCAD 仿真

本文提出了一种新型的具有双沟道和P埋层结构的击穿增强型GaN MISFET，即DCP-MISFET。下部势垒和下部沟道与漏极相连，下部二维电子气可以改善器件栅极和漏极之间的电场分布，实现增强的击穿电压（BV）。同时，栅场板下方的P埋层可以降低栅场板周围的峰值电场。所提出的具有 LGD=15 μm 的模拟器件具有 2373 V 的出色击穿电压。此外，在优化的过程中实现了 15.07 Ω•mm 的导通电阻 (RON) 和 3.736 GW•cm-2 的 Baliga 品质因数。 DCP-MISFET。与优化场板常规 GaN MISFET (FPC-MSIFET) 的击穿电压 1547 V 相比​​，