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Improved Photoelectric Performance of UV Photodetector Based on ZnO Nanoparticle‐Decorated BiOCl Nanosheet Arrays onto PDMS Substrate: The Heterojunction and Ti3C2Tx MXene Conduction Layer
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-18 , DOI: 10.1002/aelm.202000168 Weixin Ouyang 1 , Jiaxin Chen 1 , Jr‐Hau He 2 , Xiaosheng Fang 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-05-18 , DOI: 10.1002/aelm.202000168 Weixin Ouyang 1 , Jiaxin Chen 1 , Jr‐Hau He 2 , Xiaosheng Fang 1
Affiliation
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Large‐area BiOCl nanosheet arrays grown on Cu substrate are transferred onto the polydimethylsiloxane (PDMS) substrate, while the as‐fabricated BiOCl/PDMS photodetector (PD) yields negligible photocurrents under UV light illumination. The introduction of a Ti3C2Tx MXene conduction layer at the interface increases both the photocurrent and dark current by 2–3 orders of magnitude. But this PD suffers from a large dark current (6.7 pA), a low on–off ratio (2.4), and a long decay time (6.87 s) under 350 nm light illumination at 5 V. After the deposition of ZnO nanoparticles (NPs), the optimized PD achieves a low dark current of 86 fA, a high on–off ratio of 7996.5, and a short decay time of 0.93 s. Additionally, the elimination of the Ti3C2Tx MXene layer causes decreased photocurrent and prolonged decay time. The greatly improved photoresponse and response speed of these PDs are ascribed to the increased light absorption brought by the ZnO NPs, the improved carrier separation promoted by the ZnO–BiOCl heterojunction, and the efficient carrier pathways provided by the Ti3C2Tx MXene conduction layers. The construction of heterojunctions and introduction of conduction additives improve the photodetecting performance of these BiOCl‐based PDs, promoting their practical applications in the photoelectric devices.
中文翻译：
基于ZnO纳米粒子修饰的BiOCl纳米片阵列在PDMS衬底上的紫外光电探测器的光电性能的改进：异质结和Ti3C2Tx MXene导电层
在Cu衬底上生长的大面积BiOCl纳米片阵列被转移到聚二甲基硅氧烷（PDMS）衬底上，而预制的BiOCl / PDMS光电探测器（PD）在紫外光照射下产生的光电流可忽略不计。在界面处引入Ti 3 C 2 T x MXene导电层会使光电流和暗电流都增加2-3个数量级。但是该PD在5 V下在350 nm光照下具有较大的暗电流（6.7 pA），低的开关比（2.4）和较长的衰减时间（6.87 s）。ZnO纳米粒子（NPs）沉积后），经过优化的PD可以实现86fA的低暗电流，7996.5的高开关比，以及0.93 s的短衰减时间。此外，消除了Ti 3C 2 T x MXene层会导致光电流降低和衰减时间延长。这些PD的光响应和响应速度大大提高归因于ZnO NP带来的光吸收增加，ZnO–BiOCl异质结促进了载流子分离的改善以及Ti 3 C 2 T x MXene提供的有效载流子路径导电层。异质结的构建和导电添加剂的引入提高了这些基于BiOCl的PD的光电检测性能，从而促进了它们在光电器件中的实际应用。
更新日期：2020-05-18
中文翻译：
基于ZnO纳米粒子修饰的BiOCl纳米片阵列在PDMS衬底上的紫外光电探测器的光电性能的改进：异质结和Ti3C2Tx MXene导电层
在Cu衬底上生长的大面积BiOCl纳米片阵列被转移到聚二甲基硅氧烷（PDMS）衬底上，而预制的BiOCl / PDMS光电探测器（PD）在紫外光照射下产生的光电流可忽略不计。在界面处引入Ti 3 C 2 T x MXene导电层会使光电流和暗电流都增加2-3个数量级。但是该PD在5 V下在350 nm光照下具有较大的暗电流（6.7 pA），低的开关比（2.4）和较长的衰减时间（6.87 s）。ZnO纳米粒子（NPs）沉积后），经过优化的PD可以实现86fA的低暗电流，7996.5的高开关比，以及0.93 s的短衰减时间。此外，消除了Ti 3C 2 T x MXene层会导致光电流降低和衰减时间延长。这些PD的光响应和响应速度大大提高归因于ZnO NP带来的光吸收增加，ZnO–BiOCl异质结促进了载流子分离的改善以及Ti 3 C 2 T x MXene提供的有效载流子路径导电层。异质结的构建和导电添加剂的引入提高了这些基于BiOCl的PD的光电检测性能，从而促进了它们在光电器件中的实际应用。
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