Abstract The electrical performance and the stability of amorphous SiZnSnO (a-SZTO) thin film transistors (TFTs) were investigated depending on the channel thickness. The channel thickness was changed from 27 nm to 108 nm, systematically. As the channel thickness increased, the threshold voltage (VTH) of a-SZTO shifted to the positive direction, from 2.13 to 4.59 V. The negative bias temperature stress test (NBTS) was measured at −20 V for 120 min to determine the stability of a-SZTO TFTs at 60 °C. The ΔVTH was changed only 2.02 V at 27 nm because of less total trap density in the channel layer. The mechanism of stability change depending on the thickness is explained. Transmission line method (TLM) was also used to find the relation between the total resistance (RTotal) and the channel thickness. As increasing the channel thickness, the contact resistance (RC) increased and sheet resistance (Rsh) decreased. It must be considered the channel thickness of a-SZTO channel layer for the electrical properties and stability. Finally, we made the depletion load type inverter using two transistors of different channel thickness. The achieved voltage gain of the inverter is 21.962 V/V at the VDD = 11 V.

中文翻译：

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沟道厚度对非晶SiZnSnO薄膜晶体管电性能和稳定性的影响

摘要 根据沟道厚度研究了非晶 SiZnSnO (a-SZTO) 薄膜晶体管 (TFT) 的电性能和稳定性。通道厚度从 27 nm 系统地变为 108 nm。随着沟道厚度的增加，a-SZTO 的阈值电压 (VTH) 向正方向移动，从 2.13 V 到 4.59 V。 负偏压温度应力测试 (NBTS) 在 -20 V 下测量 120 分钟以确定稳定性a-SZTO TFTs 在 60 °C 下。由于沟道层中的总陷阱密度较小，ΔVTH 在 27 nm 处仅改变 2.02 V。解释了稳定性随厚度变化的机制。传输线法 (TLM) 也被用来找出总电阻 (RTotal) 和沟道厚度之间的关系。随着通道厚度的增加，接触电阻 (RC) 增加而薄层电阻 (Rsh) 减少。必须考虑 a-SZTO 沟道层的沟道厚度以保证电性能和稳定性。最后，我们使用两个不同沟道厚度的晶体管制作了耗尽型负载型逆变器。在 VDD = 11 V 时，逆变器实现的电压增益为 21.962 V/V。