Recent studies on the electrical switching of tetragonal antiferromagnet (AFM) via Néel spin-orbit torque have paved the way for the economic use of antiferromagnetic materials. The most difficult obstacle that presently limits the application of antiferromagnetic materials in spintronics, especially in memory storage applications, could be the small and fragile magnetoresistance (MR) in the AFM-based nanostructure. In this study, we investigated the spin transports in Mn₂Au-based tunnel junctions based on the first-principle scattering theory. Giant MRs more than 1000% are predicted in some Fe/MgO/Ag/Mn₂Au/Ta junctions that are about the same order as that in an MgO-based ferromagnetic tunnel junction with same barrier thickness. The interplay of the spin filtering effect, the quantum well resonant states, and the interfacial resonant states could be responsible for the unusual giant and robust MRs observed in these Mn2Au-based junctions.

中文翻译：

---

Mn 2 Au基反铁磁隧道结中的巨磁电阻

通过Néel自旋轨道转矩对四方反铁磁体（AFM）进行电开关的最新研究为反铁磁材料的经济使用铺平了道路。当前限制反铁磁材料在自旋电子学中应用的最困难的障碍，特别是在存储器存储应用中，可能是基于AFM的纳米结构中的小而易碎的磁阻（MR）。在这项研究中，我们基于第一原理散射理论研究了基于Mn ₂ Au的隧道结中的自旋输运。在某些Fe / MgO / Ag / Mn ₂中预计会出现1000％以上的巨型MRAu / Ta结与具有相同势垒厚度的基于MgO的铁磁隧道结的次序大致相同。自旋滤波效应，量子阱共振态和界面共振态之间的相互作用可能是在这些基于Mn2Au的结中观察到的异常大而坚固的MR的原因。