The recently discovered yttrium oxyfluoride (YOF) coating has been found to be a highly promising plasma-resistant material which can be coated onto the inner wall of the dry etching chambers used in the manufacturing of the three-dimensional stacking circuits of semiconductors, such as vertical NAND flash memory. Here, the coating behavior of the YOF coating which was deposited by suspension plasma spraying was investigated using a high-output coaxial feeding method. Both the deposition rate and density of YOF coatings increased with the plasma power, which was determined by the gas ratio of Ar/H₂/N₂ and the arc current. The coating thicknesses were 58 ± 3.4, 25.8 ± 2.1, 5.6 ± 0.6, and 0.93 ± 0.4 µm at plasma powers of 112, 83, 67, and 59 kW, respectively, for 20 scans with a feeding rate of the suspension at 0.045 standard liters per minute (slm). The porosities were 0.15% ± 0.01%, 0.25% ± 0.01%, and 5.50% ± 0.40% at corresponding plasma powers of 112, 83, and 67 kW. High-resolution X-ray diffraction (HRXRD) shows that the major and minor peaks of the coatings which were deposited at 112 kW stem from trigonal YOF and cubic Y₂O₃, respectively. Increasing the flow rate of the atomizing gas from 15 slm to 30 slm decreased the porosity of the YOF coating from 0.22% ± 0.03% to 0.07% ± 0.03%. The Vickers hardness of the YOF coating containing some Y₂O₃ deposited at 112 kW was 550 ± 70 HV.

中文翻译：

---

同轴进给悬浮等离子喷涂沉积的氟氧化钇涂层

已发现最近发现的氟氧化钇（YOF）涂层是一种非常有前途的抗等离子体材料，可以将其涂覆到用于制造半导体三维堆叠电路的干法蚀刻室的内壁上，例如垂直NAND闪存。在此，使用高输出同轴进给方法研究了通过悬浮等离子喷涂沉积的YOF涂层的涂层行为。YOF涂层的沉积速率和密度均随等离子功率的增加而增加，这取决于Ar / H ₂ / N ₂的气体比和电弧电流。在等离子功率为112、83、67和59 kW的条件下，对于20次扫描，悬浮液的进料速度为0.045标准，涂层厚度分别为58±3.4、25.8±2.1、5.6±0.6和0.93±0.4 µm。每分钟升（slm）。在112、83和67kW的相应等离子体功率下，孔隙率为0.15％±0.01％，0.25％±0.01％和5.50％±0.40％。高分辨率X射线衍射（HRXRD）显示，沉积功率为112 kW的涂层的主峰和次峰分别来自三角YOF和立方Y ₂ O ₃。将雾化气体的流量从15 slm增加到30 slm，将YOF涂层的孔隙率从0.22％±0.03％降低到0.07％±0.03％。包含一些Y ₂ O的YOF涂层的维氏硬度以112 kW沉积的₃为550±70 HV。