Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications,Physica Status Solidi (A) - Applications and Materials Science

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Nanogranular Cadmium Sulfoselenide Thin Films Grown by Successive Ionic Layer Adsorption and Reaction Method for Optoelectronic Applications
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-05-17 , DOI: 10.1002/pssa.202000002
Tejasvinee S. Bhat _{1,

2} , Sawanta S. Mali ₃ , Jyoti V. Patil ₃ , Shirish T. Killedar ₄ , Trishala R. Desai ₄ , Ashwinee N. Patil ₅ , Chang Kook Hong ₃ , Tukaram D. Dongale ₄ , Pramod S. Patil _{1,

2}

Affiliation

A bottom‐up, simple, and promising successive ionic layer adsorption and reaction (SILAR) method is used to synthesize cadmium sulfoselenide (CdS_xSe_1–x) thin films. The structural, morphological, and optical properties of the CdS_xSe_1–x thin films are studied as a function of bath composition. X‐ray diffraction (XRD) study reveals that the CdS_xSe_1–x films are nanocrystalline in nature having hexagonal crystal structure. The morphology studies show that the films are transformed from nanogranular to interconnected net‐like structures as a function of bath composition. The deposited CdS_xSe_1–x thin films are tested for photoelectrochemical (PEC) application and CSSe_0.4 sample shows the highest power conversion efficiency (PCE) of 0.55%. Furthermore, Al/CSSe_0.4/FTO thin‐film device shows excellent nonvolatile memory properties in the visible light illumination with 10 000 endurance cycles and can retain the data up to 1000 s with good memory window and uniformity in the resistive switching process. It is noteworthy that, the CdS_xSe_1–x is a versatile and functional material for optoelectronics.

中文翻译：

连续离子层吸附和反应法生长的纳米颗粒硫代硒化镉薄膜在光电领域的应用

自底向上，简单且很有希望的连续离子层吸附和反应（SILAR）方法用于合成亚硒化镉（CdS _x Se _{1- x}）薄膜。研究了CdS _x Se _{1– x}薄膜的结构，形态和光学性质与镀液成分的关系。X射线衍射（XRD）研究表明，CdS _x Se _{1- x}膜本质上是具有六方晶体结构的纳米晶体。形态学研究表明，随着镀液组成的变化，薄膜从纳米颗粒转变为相互连接的网状结构。沉积的CdS _x Se _1–x薄膜经过光电化学（PEC）应用测试，CSSe_0.4样品显示出最高的功率转换效率（PCE）为0.55％。此外，Al / CSSe_0.4 / FTO薄膜器件在可见光照明下具有出色的非易失性存储特性，具有10,000个耐久循环，并且可以将数据保留长达1000 s，并具有良好的存储窗口和电阻切换过程的均匀性。值得注意的是，CdS_x Se_{1- x}是一种用于光电子学的多功能和功能性材料。

更新日期：2020-05-17

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