Based on the earlier experimental investigation of the existing GaAs pHEMT small‐signal modeling approaches and their applicability to different manufacturing processes, a combined automatic small‐signal noise model extraction technique, suitable for design of low‐noise and buffer amplifiers is proposed. The technique is based on the usage of measured S‐parameters of passive test structures and S‐parameters of the transistor in cold modes. Expressions are given for extraction of the intrinsic parameters of an equivalent circuit using linear regression. It is shown that the application of the proposed method allows extracting a small‐signal GaAs pHEMT model both in the probe‐tip reference planes and at on‐wafer calibration planes. The moving average algorithm was applied for preprocessing the results of measurements of the 50 Ohm noise figure during extraction of the noise model. The results of S‐parameters and noise figure simulation agree well with the measurements. The new technique was implemented as a plugin in a commercial EDA tool and enables to derive a ready‐to use small‐signal noise model from measured S‐parameters and 50 Ohm noise figure of a 0.15 μm GaAs pHEMT.

中文翻译：

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面向放大器的小信号噪声模型提取组合技术

基于对现有GaAs pHEMT小信号建模方法的早期实验研究及其在不同制造工艺中的适用性，提出了一种适用于低噪声和缓冲放大器设计的组合自动小信号噪声模型提取技术。该技术基于无源测试结构的实测S参数和冷模式下晶体管的S参数的使用。给出了用于使用线性回归提取等效电路的固有参数的表达式。结果表明，所提方法的应用允许在探针尖端参考平面和晶圆上校准平面上提取小信号GaAs pHEMT模型。应用移动平均算法对噪声模型提取过程中50欧姆噪声系数的测量结果进行预处理。S参数和噪声系数模拟的结果与测量结果非常吻合。这项新技术已作为商用EDA工具中的插件实现，并能够从实测的S参数和0.15μmGaAs pHEMT的50 Ohm噪声系数得出可立即使用的小信号噪声模型。