Abstract Thin films of PbS doped with tin (2 ≤ Sn ≤ 8 wt.%) were deposited on glass substrates by cost- effective nebulizer spray method. X-ray diffraction studies confirm the polycrystalline nature with a face centered cubic structure along with the orientation of (200) plane. SEM/AFM studies reveal that the nano-sized spherical and granular shaped grains roofed the whole film surface and the grain shapes were changed with the change in Sn doping percentage. Bandgap was found to decrease from 1.98 eV to 1.66 eV with an increase in the doping concentration from 2 to 6 wt%. Hall Effect measurement confirmed p-type conducting nature for all the doped PbS films. The resistivity and carrier concentration values are found to be about 0.32 × 103 Ωcm and 6.78 × 1013 cm−3, respectively, for the optimized PbS:Sn film (6 wt%). The response of the heterostructured (FTO/n-CdS/p-PbS:Sn/Ag) solar cell with the optimal Sn doping (6 wt% Sn) was studied under dark and illuminated conditions.

中文翻译：

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使用优化的 Sn 掺入 PbS 薄膜通过雾化雾化器喷雾热解制造异质结构太阳能电池

摘要 掺杂锡 (2 ≤ Sn ≤ 8 wt.%) 的 PbS 薄膜通过具有成本效益的雾化器喷雾方法沉积在玻璃基板上。X 射线衍射研究证实了具有面心立方结构以及 (200) 面取向的多晶性质。SEM/AFM 研究表明，纳米尺寸的球形和颗粒状晶粒覆盖了整个薄膜表面，并且晶粒形状随着 Sn 掺杂百分比的变化而变化。发现随着掺杂浓度从 2 重量％增加到 6 重量％，带隙从 1.98 eV 减少到 1.66 eV。霍尔效应测量证实了所有掺杂 PbS 薄膜的 p 型导电性质。对于优化的 PbS:Sn 薄膜 (6 wt%)，发现电阻率和载流子浓度值分别约为 0.32 × 103 Ωcm 和 6.78 × 1013 cm-3。