In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device simulator, which is capable of accounting for the interplay between charge traps and the random dopant fluctuation effect. It was observed that the impact of a single charged trap on the transistor’s on-current is strongly dependent on the trap position along the channel length, on trap depth into the gate oxide, and on the trap position along the channel width. The current deviation estimated from statistical simulations is shown to be exponentially distributed, in agreement with experimental data from the literature. Results are also compared with uniform channel theory predictions.

中文翻译：

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通过基于粒子的蒙特卡洛器件模拟对p型MOSFET中电荷陷阱的影响进行统计分析

本文对电荷陷阱对p漏极电流的静态影响进行了统计分析提出了一种金属氧化物半导体场效应晶体管。该研究是通过使用基于3-D粒子的Monte Carlo器件模拟器进行的，该模拟器能够解决电荷陷阱与随机掺杂剂波动效应之间的相互作用。可以看出，单个带电陷阱对晶体管导通电流的影响在很大程度上取决于沿沟道长度的陷阱位置，栅极氧化层的陷阱深度以及沿沟道宽度的陷阱位置。与文献中的实验数据相一致，从统计模拟中估计出的当前偏差显示为指数分布。还将结果与统一渠道理论的预测进行比较。