Abstract For the formation of CZTSe films, selenization time and temperature play a crucial role in a material synthesis which in turn highly affects the properties of the films. In this work, Cu, Zn, Sn and Se were thermally-deposited sequentially on Mo coated soda-lime glass (SLG) substrates. For the formation of Cu2ZnSnSe4 (CZTSe) deposited films were annealed in a two-step process (first step 230 °C for 10 min and second step 450 °C for 5 min–30 min with 5 min interval) in Selenium (Se) atmosphere. The effect of selenization time on the structural, surface morphology, compositional, optical and electrical properties of the CZTSe films was studied. The formation of CZTSe phase is observed from XRD and Raman spectra. It was observed that with the increase in selenization time the CuSe binary phase present in the film suppressed gradually. The grain size, conductivity and mobility of the films increase whereas the band gap decreases with the increase in the hold time in the second step of selenization. The selenization time improves the properties of the films which can be suitable for solar cell applications. The study shows that optimum selenization time is essential to get a good quality CZTSe film. The device has been attempted for sample M6 and the best device obtained gives a conversion efficiency of 3.97%

中文翻译：

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制备CZTSe薄膜的硒化参数优化

摘要 对于 CZTSe 薄膜的形成，硒化时间和温度在材料合成中起着至关重要的作用，反过来又会极大地影响薄膜的性能。在这项工作中，Cu、Zn、Sn 和 Se 依次热沉积在 Mo 涂层的钠钙玻璃 (SLG) 基板上。为了形成 Cu2ZnSnSe4（CZTSe）沉积膜，在硒（Se）气氛中分两步退火（第一步 230°C 10 分钟，第二步 450°C 5 分钟-30 分钟，间隔 5 分钟） . 研究了硒化时间对 CZTSe 薄膜的结构、表面形貌、成分、光学和电学性能的影响。从 XRD 和拉曼光谱观察到 CZTSe 相的形成。观察到随着硒化时间的增加，存在于薄膜中的 CuSe 二元相逐渐受到抑制。随着第二步硒化保持时间的增加，薄膜的晶粒尺寸、导电性和迁移率增加，而带隙减小。硒化时间改善了适用于太阳能电池应用的薄膜的性能。研究表明，最佳硒化时间对于获得优质 CZTSe 薄膜至关重要。该器件已用于样品 M6，获得的最佳器件的转换效率为 3.97%