The fabrication of p-type silicon junctionless tri-gate transistors and their temperature dependent transport studies are reported in this work. The fabricated transistors have shown a good transfer characteristic down to a low temperature of ∼ 80 K with an ON/OFF ratio of 10 6 . The threshold voltage and the subthreshold slope were found to be dependent on temperature. In particular, the threshold voltage and the flat band voltage have positive slopes of 2.24 and 1.19 mV K −1 , respectively, with temperature. Channel resistance was found to be increasing with decreasing temperature. The devices have shown a typical 1/f noise behavior in the frequency range of (1–50) Hz and 1/f 2 type behavior in the frequency range of (50–100 Hz). At a temperature of 4.2 K, current vs. gate voltage characteristic at a fixed source drain bias shows clear coulomb peaks with different intervals for different gate bias voltages and the observed spikes were consistent wit...

中文翻译：

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低噪声硅三栅极无结单孔晶体管中的共振隧穿和空穴传输行为

这项工作报道了p型硅无结三栅晶体管的制造及其与温度有关的传输研究。所制成的晶体管在开/关比为10 6的情况下，在低至约80 K的低温下均显示出良好的传输特性。发现阈值电压和亚阈值斜率取决于温度。特别地，阈值电压和平坦带电压随温度分别具有2.24和1.19mV K -1的正斜率。发现通道电阻随温度降低而增加。器件在（1–50）Hz频率范围内显示了典型的1 / f噪声行为，在（50–100 Hz）频率范围内显示了1 / f 2类型的行为。在4.2 K的温度下，电流与