In this work, a δ-doped dual MOS-capacitor (MOSCAP) (D-MOS) tunnel field effect transistor is proposed and investigated. The investigation has been carried out by varying the mole fraction of the SiGe δ-layer as well as by optimizing device dimensions like the effective oxide thickness, elevated channel thickness and epi-layer (thin intrinsic layer of the MOSCAP region) length and thickness. The optimized proposed device offers an ON current of 6.91 × 106 A µm-1, ION/IOFF of 4.83 × 108, average sub-threshold swing of 18.67 mV dec−1 and a maximum cut-off frequency of 1.28 × 109 Hz. Furthermore, the application of the proposed device as a near-infrared optical sensor is studied using a photosensitive gate. It is observed that the device can sense closely spaced spectral wavelengths (~100 nm) in the near-infrared region of the spectrum (1–0.7 µm) at low intensity of illumination (<1 W cm−2). The peak spectral sensitivities of 4.67 × 103, 3.3 × 103 and 9.77 × 102 for the wavelength pairs (0.8 µm–0.7 µm), (0.9 µm–0.8 µm) and (1 µm–0.9 µm), respectively, are observed making it a highly sensitive optical sensor.

中文翻译：

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具有改进的垂直隧道效应的双 MOSCAP TFET 的研究及其近红外传感应用

在这项工作中，提出并研究了一种 δ 掺杂的双 MOS 电容器 (MOSCAP) (D-MOS) 隧道场效应晶体管。该研究是通过改变 SiGe δ 层的摩尔分数以及优化器件尺寸（如有效氧化物厚度、增加的沟道厚度和外延层（MOSCAP 区域的薄本征层）长度和厚度）来进行的。优化后的器件提供 6.91 × 106 A µm-1 的导通电流、4.83 × 108 的 ION/IOFF、18.67 mV dec−1 的平均亚阈值摆幅和 1.28 × 109 Hz 的最大截止频率。此外，使用光敏门研究了所提出的设备作为近红外光学传感器的应用。据观察，该设备可以在光谱的近红外区域 (1–0. 7 µm) 在低照度 (<1 W cm−2) 下。观察到波长对 (0.8 µm–0.7 µm)、(0.9 µm–0.8 µm) 和 (1 µm–0.9 µm) 的峰值光谱灵敏度分别为 4.67 × 103、3.3 × 103 和 9.77 × 102高度灵敏的光学传感器。