当前位置: X-MOL 学术J. Phys. Condens. Matter › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Stable half-metallicity in the (001)-oriented thin films of Co-doped full-Heusler alloys Ti2Fe1‒xCoxSn (x=0.00, 0.25, 0.50, 0.75 or 1.00)
Journal of Physics: Condensed Matter ( IF 2.3 ) Pub Date : 2020-05-14 , DOI: 10.1088/1361-648x/ab832d
Iltaf Muhammad 1 , Jian-Min Zhang , Anwar Ali , Muhammad Mushtaq , Suleman Muhammad
Affiliation  

Thin films with stable half-metallic (HM) character and 100% spin-polarization (SP) are required to be used in spintronic devices. The HM character has been predicted theoretically in many Heusler alloys thin films and confirmed by experiments. Full-Heusler alloy Ti2FeSn has been studied extensively. It has been reported that their (001)-oriented thin films with TiFe or TiSn terminations preserve 100% SP, but the HM character is unstable because the edge of the bandgap is closed to the Fermi level EF. Therefore, we investigate the effects of the Co-doping on the structural, electronic and magnetic properties of the bulk full-Heusler alloys Ti2Fe1‒xCoxSn (x=0.00, 0.25, 0.50, 0.75 or 1.00) and their (001)-oriented thin films. The bulk Ti2Fe1‒xCoxSn (x=0.00, 0.25, 0.50, 0.75 or 1.00) alloys are all HM ferromagnets. We investigate twelve possible terminations and show that five of them preserve HM character with 100% SP at the Fermi level EF, while in the remaining seven, surface states emerge in the spin-down channel at the Fermi level EF, significantly reducing their SP. The Co-doping significantly increases the stability of the TiSn slab, also increases its spin-down bandgap E_g^↓ and HM gap E_g^HM at x=0.50. The stable HM character makes it is a slab of maximum benefit in the applications of spintronic devices, especially in magnetic tunnel junctions.

中文翻译:


Co掺杂全Heusler合金Ti2Fe1−xCoxSn(x=0.00、0.25、0.50、0.75或1.00)的(001)取向薄膜中稳定的半金属性



自旋电子器件需要具有稳定的半金属 (HM) 特性和 100% 自旋极化 (SP) 的薄膜。许多霍斯勒合金薄膜的 HM 特性已在理论上得到预测,并通过实验得到证实。全霍斯勒合金 Ti2FeSn 已被广泛研究。据报道,他们的具有 TiFe 或 TiSn 终端的 (001) 取向薄膜保留了 100% SP,但 HM 特性不稳定,因为带隙边缘接近费米能级 EF。因此,我们研究了Co掺杂对大块全Heusler合金Ti2Fe1−xCoxSn(x=0.00、0.25、0.50、0.75或1.00)及其(001)取向薄层的结构、电子和磁性能的影响。电影。大块 Ti2Fe1−xCoxSn (x=0.00、0.25、0.50、0.75 或 1.00) 合金都是高模铁磁体。我们研究了 12 种可能的终止,结果表明其中 5 种保留了 HM 特征,在费米能级 EF 处具有 100% SP,而在其余 7 种中,表面态出现在费米能级 EF 处的自旋向下通道中,显着降低了它们的 SP。共掺杂显着提高了 TiSn 板的稳定性,还增加了 x=0.50 时的自旋向下带隙 E_g^↓ 和 HM 带隙 E_g^HM。稳定的 HM 特性使其成为自旋电子器件应用中具有最大优势的板,特别是在磁隧道结中。
更新日期:2020-05-14
down
wechat
bug