This article explores the viability of nitrogen enriched silicon for particle physics application. For that purpose silicon diodes and strip sensors were produced using high resistivity float zone silicon, diffusion oxygenated float zone silicon, nitrogen enriched float zone silicon and magnetic Czochralski silicon. The article features comparative studies using secondary ion mass spectrometry, electrical characterization, edge transient current technique, source and thermally stimulated current spectroscopy measurements on sensors that were irradiated up to a fluence of 1015 neq/cm2. Irradiations were performed with 23 MeV protons at the facilities in Karlsruhe (KIT), with 24 GeV/c protons at CERN (PS-IRRAD) and neutrons at the research reactor in Ljubljana. Secondary ion mass spectrometry measurements give evidence for nitrogen loss after processing, which makes gaining from nitrogen enrichment difficult.

中文翻译：

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用于粒子探测器的富氮硅的研究

本文探讨了富氮硅在粒子物理应用中的可行性。为此，使用高电阻率浮区硅、扩散氧化浮区硅、富氮浮区硅和磁性直拉硅来生产硅二极管和条形传感器。本文重点介绍了使用二次离子质谱法、电气特性、边缘瞬态电流技术、源和热刺激电流光谱测量对照射量高达 1015 neq/cm2 的传感器进行的比较研究。在卡尔斯鲁厄 (KIT) 的设施中使用 23 MeV 质子进行了辐照，在欧洲核子研究中心 (PS-IRRAD) 使用了 24 GeV/c 质子，在卢布尔雅那的研究反应堆中使用了中子。