We investigated the effect of atomic layer deposition (ALD) Al 2 O 3 (50 nm)/plasma-enhanced chemical vapour deposition (PECVD) SiO 2 (250 nm) and PECVD SiO 2 (300 nm) passivation layers on the leakage current and efficiency of InGaN-based micro-LEDs with different sizes. Regardless of passivation layers, the leakage current increased with decreasing LED size and increasing reverse bias. Emission microscopy examination showed that with increasing reverse bias, the number of defect-related emission spots and their intensities increased. For the micro-LEDs <50 μ m, the emission spots were mainly located at the sidewall regions. Above −10 V, the single PECVD SiO 2 passivation layer gave higher leakage current than the double ALD-Al 2 O 3 /PECVD-SiO 2 layer. The micro-LEDs with the single passivation layer gave the ideality factors of about 2.0, while that with the double layer exhibited values sma...

中文翻译：

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通过优化钝化提高GaN基微发光二极管的泄漏特性和效率

我们研究了原子层沉积（ALD）Al 2 O 3（50 nm）/等离子增强化学气相沉积（PECVD）SiO 2（250 nm）和PECVD SiO 2（300 nm）钝化层对漏电流的影响。不同尺寸的基于InGaN的微型LED的效率。无论钝化层如何，泄漏电流都会随着LED尺寸的减小和反向偏置的增加而增加。发射显微镜检查显示，随着反向偏压的增加，与缺陷相关的发射点的数量和强度增加。对于<50μm的微型LED，发射点主要位于侧壁区域。高于-10 V，单层PECVD SiO 2钝化层比双层ALD-Al 2 O 3 / PECVD-SiO 2层具有更高的泄漏电流。具有单个钝化层的micro-LED的理想因子约为2.0，