In this research, n-ZnO/p-CuGaO2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable with increasing radiation dose for both gamma and neutron flux exposure. The maximum turn-on-voltage of the fabricated diode was shown to be 1.5 V. Exposure towards gamma, shows that the turn-on is increased to 4.7 V at 200 kGy. However, the effect of neutron flux at 6.5x1015 n/cm2 shows a small significant effect on the turn on voltage of 1.7 V after irradiation. Results show moderate mitigation towards irradiation, indicating that n-ZnO/p-CuGaO2 thin film is capable of withstanding harsh radiation environment while still retaining its semiconductor as the changes in band gap ranges between 3 eV to 4 eV at post-irradiation.

中文翻译：

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伽马射线和中子辐射对 n-ZnO/p-CuGaO2 肖特基二极管的电学和结构特性的影响

在这项研究中，制造了基于 n-ZnO/p-CuGaO2 的半导体器件，并在不同通量下随着总电离剂量 (TID) 和中子注量的增加而暴露于伽马射线。根据 IV 特性，随着伽马和中子通量暴露的辐射剂量的增加，二极管的导通电压的降低是显着的。制造的二极管的最大导通电压显示为 1.5 V。对伽马的暴露表明在 200 kGy 下导通增加到 4.7 V。然而，6.5x1015 n/cm2 的中子通量的影响对辐照后 1.7 V 的开启电压有很小的显着影响。结果显示对辐照的适度缓解，