InN dots grown by metalorganic chemical vapor deposition were analyzed using atom probe tomography and transmission electron microscopy. A dot was found to be composed of pure InN at the core with a sharp interface with its underlying GaN layer and a more diffuse interface with its top GaN cap layer. Both techniques revealed the hexagonal truncated pyramid shape of the dots. APT has been used in the analysis of the wetting layers formed between the quantum dots. The fractional coverage appeared to saturate at longer growth times, with the highest fraction of monolayer coverage found to be 0.6.

中文翻译：

---

金属有机化学气相沉积法在InN浸润层和点中铟分布的定量研究

使用原子探针层析成像和透射电子显微镜分析了通过金属有机化学气相沉积法生长的InN点。发现一个点由核心处的纯InN组成，与其下层的GaN层具有清晰的界面，而其顶部的GaN盖层具有更扩散的界面。两种技术都揭示了点的六角形截棱锥形状。APT已用于分析量子点之间形成的润湿层。分数覆盖似乎在更长的生长时间达到饱和，发现单层覆盖的最高分数为0.6。