In an earlier study micro-LED micro display (< 1 inch) on silicon CMOS backplane was demonstrated for augmented reality (AR) applications. Here we report the feasibility of wafer-level monolithic integration of micro-LEDs on glass substrate/backplane. Such issues as the cracking of GaN epitaxial layer, the deviation of alignment, and the peeling of insulator are discussed. SU-8 is proposed as the insulator material in vertical micro-LEDs, resulting into improved light extraction efficiency and allowing for the reduced light crosstalk between sub pixels if the integrated reflective mirrors are used. A directly driven micro-LED parallel array with a resolution of ${320}\times {720}$ with individual LED size ranging from 5 $\mu \text{m}$ to 28 $\mu \text{m}$ is demonstrated. It is believed that this monolithic technology on glass will play an important role in future high performance and low cost wearable and/or phone displays.

中文翻译：

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玻璃上垂直 Micro-LED 的晶圆级单片集成

在早期的研究中，硅 CMOS 背板上的微型 LED 微型显示器（< 1 英寸）被证明用于增强现实 (AR) 应用。在这里，我们报告了微 LED 在玻璃基板/背板上的晶圆级单片集成的可行性。讨论了GaN外延层开裂、取向偏差、绝缘体剥落等问题。SU-8 被提议作为垂直微型 LED 中的绝缘体材料，如果使用集成反射镜，可以提高光提取效率并允许减少子像素之间的光串扰。直接驱动的微型 LED 并联阵列，分辨率为 ${320}\times {720}$ 单个 LED 尺寸范围从 5 $\mu \text{m}$ 到 28 $\mu \text{m}$ 被证明。相信这种玻璃上的单片技术将在未来高性能和低成本的可穿戴和/或手机显示器中发挥重要作用。