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Strategies to approach high performance in Cr3+-doped phosphors for high-power NIR-LED light sources.
Light: Science & Applications ( IF 20.6 ) Pub Date : 2020-05-15 , DOI: 10.1038/s41377-020-0326-8
Zhenwei Jia 1, 2 , Chenxu Yuan 1, 3 , Yongfu Liu 1 , Xiao-Jun Wang 4 , Peng Sun 1 , Lei Wang 2 , Haochuan Jiang 1 , Jun Jiang 1
Affiliation  

Broadband near-infrared (NIR)-emitting phosphors are key for next-generation smart NIR light sources based on blue LEDs. To achieve excellent NIR phosphors, we propose a strategy of enhancing the crystallinity, modifying the micromorphology, and maintaining the valence state of Cr3+ in Ca3Sc2Si3O12 garnet (CSSG). By adding fluxes and sintering in a reducing atmosphere, the internal quantum efficiency (IQE) is greatly enhanced to 92.3%. The optimized CSSG:6%Cr3+ exhibits excellent thermal stability. At 150 °C, 97.4% of the NIR emission at room temperature can be maintained. The fabricated NIR-LED device emits a high optical power of 109.9 mW at 520 mA. The performances of both the achieved phosphor and the NIR-LED are almost the best results until now. The mechanism for the optimization is investigated. An application of the NIR-LED light source is demonstrated.

中文翻译:


用于高功率 NIR-LED 光源的 Cr3+ 掺杂荧光粉实现高性能的策略。



宽带近红外 (NIR) 发射荧光粉是基于蓝色 LED 的下一代智能 NIR 光源的关键。为了获得优异的近红外荧光粉,我们提出了提高结晶度、改变微形貌并保持 Ca3Sc2Si3O12 石榴石 (CSSG) 中 Cr3+ 价态的策略。通过添加助熔剂并在还原气氛中烧结,内量子效率(IQE)大大提高至92.3%。优化后的CSSG:6%Cr3+表现出优异的热稳定性。在150℃时,可以保持室温下97.4%的NIR发射。所制造的 NIR-LED 器件在 520 mA 电流下发出 109.9 mW 的高光功率。所获得的荧光粉和NIR-LED的性能几乎是迄今为止最好的结果。研究了优化的机制。演示了 NIR-LED 光源的应用。
更新日期:2020-05-15
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