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Introduction of an Al Seed Layer for Facile Adsorption of MoCl5 during Atomic Layer Deposition of MoS2
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-05-15 , DOI: 10.1002/pssa.201901042 Wonsik Ahn 1 , Hyangsook Lee 1, 2 , Yeonchoo Cho 3 , Kyung-Eun Byun 3 , Hoijoon Kim 1 , Mirine Leem 1 , Heesoo Lee 1 , Taejin Park 4 , Eunha Lee 2 , Hyeon-Jin Shin 3 , Hyoungsub Kim 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-05-15 , DOI: 10.1002/pssa.201901042 Wonsik Ahn 1 , Hyangsook Lee 1, 2 , Yeonchoo Cho 3 , Kyung-Eun Byun 3 , Hoijoon Kim 1 , Mirine Leem 1 , Heesoo Lee 1 , Taejin Park 4 , Eunha Lee 2 , Hyeon-Jin Shin 3 , Hyoungsub Kim 1
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A low‐temperature one‐step growth method for few‐layer MoS2 using an atomic layer deposition scheme with MoCl5 and H2S precursors is systematically studied by introducing an ultrathin Al seed layer. First, to optimize the deposition conditions, the effects of the deposition (200–420 °C) and MoCl5 canister (100–160 °C) temperatures on the MoS2 growth behavior are investigated. On the SiO2 surface, increasing the deposition temperature reduces the growth rate while favoring more lateral growth. However, an increase in the MoCl5 sublimating temperature, which is beneficial to improve the film quality, sharply reduces the growth rate, probably owing to the pronounced self‐etching effect of MoCl5. To compensate for the reduced deposition rate while maintaining the MoS2 quality, an ultrathin Al seed layer (≈5 nm) is introduced, which promotes the surface adsorption of MoCl5 molecules at an early growth stage according to density functional theory calculations. Thus, a polycrystalline mono‐to‐bilayer MoS2 film with negligible amounts of residual contaminants (particularly Cl and Al) is successfully synthesized using the proposed Al seeding approach.
中文翻译：
引入Al籽晶层以在MoS2原子层沉积过程中轻松吸附MoCl5
通过引入超薄Al种子层，系统地研究了采用MoCl 5和H 2 S前体的原子层沉积方案对多层MoS 2进行低温一步生长的方法。首先，为了优化沉积条件，研究了沉积温度（200–420°C）和MoCl 5罐（100–160°C）温度对MoS 2生长行为的影响。在SiO 2表面上，增加沉积温度会降低生长速率，同时有利于横向生长。但是，MoCl 5的增加升华温度有利于改善薄膜质量，可能会大幅降低生长速率，这可能是由于MoCl 5的显着自蚀刻作用所致。为了在保持MoS 2质量的同时补偿降低的沉积速率，引入了超薄的Al种子层（≈5nm），根据密度泛函理论计算，该种子层可在早期生长阶段促进MoCl 5分子的表面吸附。因此，使用拟议的Al注入方法成功地合成了具有少量残留污染物（尤其是Cl和Al）的多晶单层或双层MoS 2薄膜。
更新日期：2020-05-15
中文翻译：
引入Al籽晶层以在MoS2原子层沉积过程中轻松吸附MoCl5
通过引入超薄Al种子层，系统地研究了采用MoCl 5和H 2 S前体的原子层沉积方案对多层MoS 2进行低温一步生长的方法。首先，为了优化沉积条件，研究了沉积温度（200–420°C）和MoCl 5罐（100–160°C）温度对MoS 2生长行为的影响。在SiO 2表面上，增加沉积温度会降低生长速率，同时有利于横向生长。但是，MoCl 5的增加升华温度有利于改善薄膜质量，可能会大幅降低生长速率，这可能是由于MoCl 5的显着自蚀刻作用所致。为了在保持MoS 2质量的同时补偿降低的沉积速率，引入了超薄的Al种子层（≈5nm），根据密度泛函理论计算，该种子层可在早期生长阶段促进MoCl 5分子的表面吸附。因此，使用拟议的Al注入方法成功地合成了具有少量残留污染物（尤其是Cl和Al）的多晶单层或双层MoS 2薄膜。
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