Abstract P-type β-Ga2O3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5 × 103 A/W), external quantum efficiency (4.7 × 106%), detectivity (1.5 × 1015 Jones), and gain-bandwidth product (106) at 5 V bias, very low noise equivalent power (4.9 × 10−16 W/Hz1/2) and high specific detectivity (1.9 × 1013 Jones) at 1 kHz and 3 V bias. The excellent performances of the p-type β-Ga2O3 DUV MSM PDs are attributed to the charge carrier multiplication via collective excitation of aggregated excitons and/or electron-hole liquid within the fabricated high-quality p-type β-Ga2O3 films, which possess the room-temperature Hall resistivity of 52.6 Ωcm, the hole mobility of 41.4 cm2/V⋅s, and the hole concentration of 2.86 × 1015 cm−3. The unprecedentedly high photoresponsivity and detectivity and the carrier multiplication mechanism in high-quality p-type β-Ga2O3 films pave a novel way to fabricate super sensitive DUV PDs based on p-type wide-bandgap oxide semiconductors.

中文翻译：

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具有极高响应度和增益带宽积的P型β-Ga2O3金属-半导体-金属日盲光电探测器

摘要 P型β-Ga2O3薄膜深紫外（DUV）太阳盲金属-半导体-金属（MSM）光电探测器（PD）具有极高的光响应性（9.5×103 A / W），外量子效率（4.7× 106%)、探测率 (1.5 × 1015 Jones) 和增益带宽积 (106) 在 5 V 偏置、极低噪声等效功率 (4.9 × 10−16 W / Hz1 / 2) 和高比探测率 (1.9 × 1013琼斯）在 1 kHz 和 3 V 偏置。p 型 β-Ga2O3 DUV MSM PD 的优异性能归因于通过聚集激子和/或电子空穴液体在制造的高质量 p 型 β-Ga2O3 薄膜中集体激发的电荷载流子倍增，其具有室温霍尔电阻率为 52.6 Ωcm，空穴迁移率为 41.4 cm2 / V⋅s，空穴浓度为 2.86 × 1015 cm − 3。