The full-wave analysis of the Dyakonov–Shur instability in an ungated short-channel high electron mobility transistor (HEMT) is investigated in this paper. This mechanism causes the emission of electromagnetic radiations by the device. The accurate analysis of the device is important especially when large electric fields are present. Herein, to analyze such structures, the complete hydrodynamic model, which is the simultaneous solution of Maxwell’s equations and the first three moments of the Boltzmann transport equation, is used. This model well describes the electron-wave interactions by considering the transport parameter variations with the electron energy and temperature. These variations are especially considerable when the emitter operates at high electromagnetic fields and were not considered in previous studies. The obtained results demonstrate the oscillation current along the channel and consequently the radiated power of the device are severely influenced by the transport parameter variations. The developed analysis method describes the behavior of the device as a terahertz emitter more accurately than the available ones.

本文研究了非门控短沟道高电子迁移率晶体管（HEMT）中Dyakonov–Shur不稳定性的全波分析。该机制导致设备发射电磁辐射。器件的准确分析非常重要，尤其是在存在大电场的情况下。在这里，为了分析这种结构，使用了完整的流体动力学模型，该模型是麦克斯韦方程组和玻耳兹曼输运方程组的前三个矩的同时解。该模型通过考虑传输参数随电子能量和温度的变化很好地描述了电子波相互作用。当发射器在高电磁场下工作时，这些变化尤其明显，而以前的研究中并未考虑这些变化。所获得的结果证明了沿着通道的振荡电流，因此，器件的辐射功率受到传输参数变化的严重影响。所开发的分析方法比可用器件更准确地描述了器件作为太赫兹发射器的行为。