Abstract The possibility of maximum transmittance at lower thickness of light transmitting ZnS layer and its optimization by air-annealing as an alternative to hazardous and expensive CdS is reported in this communication in order to achieve better buffer layer for solar cells. Thin films of ZnS were deposited using e-beam evaporation on glass and ITO substrates and subjected to air-annealing followed by characterizations for physical properties. XRD patterns revealed amorphous behavior which transformed into cubic (111) plane with change of substrate and annealing whereas surface topography reveals hill and deep valley like structures. Optimal transmittance of maximum 95% in visible region, direct band gap of 3.38 eV and maximum electrical conductivity were observed for 200 °C annealed films. The study refers that films annealed at 200 °C are claimed to be suitable for buffer layer applications.

中文翻译：

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通过在太阳能电池应用中使用空气退火进行优化，实现所需质量的 ZnS 缓冲层

摘要 本文报道了在较低厚度的透光 ZnS 层下实现最大透射率的可能性及其通过空气退火优化作为危险和昂贵的 CdS 的替代品，以便为太阳能电池实现更好的缓冲层。使用电子束蒸发在玻璃和 ITO 基板上沉积 ZnS 薄膜，并进行空气退火，然后进行物理特性表征。XRD 图案显示无定形行为随着衬底的变化和退火转变为立方 (111) 平面，而表面形貌显示山丘和深谷状结构。对于 200 °C 退火薄膜，观察到可见光区的最佳透射率最大为 95%，直接带隙为 3.38 eV，电导率最大。