Development of accurate models for resistive switching devices (memristors) is a research topic of utmost interest. Behavioral models usually employ window functions (WFs) to capture the dependency of the resistance switching-rate on the bias conditions. Several WFs have been published so far, all of them being functions of just the state variable(s), ignoring the effect of the applied signal magnitude in dynamic behavior. In this context, we describe in an extended manner a generalized concept of bias-dependent WFs, designed to enhance behavioral models in capturing rich dynamic time-response of memristors. We present a specific WF formulation and evaluate its effect on the performance of threshold-type models of voltage-controlled bipolar memristor, in simulations with LTSPICE. The obtained results not only reflect the accumulated effect of the applied signal and the proper saturation of the device at voltage-dependent levels, but are also quantitatively in line with experimental data taken from commercial self-directed channel (SDC) memristors of Knowm Inc.

电阻开关器件（忆阻器）的精确模型的开发是最受关注的研究课题。行为模型通常使用窗口函数（WF）来捕获电阻切换速率对偏置条件的依赖性。到目前为止，已经出版了几份WF，它们都是状态变量的函数，而忽略了施加信号幅度对动态行为的影响。在这种情况下，我们以扩展的方式描述了偏倚相关的WF的广义概念，该概念旨在增强行为模型以捕获忆阻器的丰富动态时间响应。在LTSPICE仿真中，我们提出了一种特定的WF公式，并评估了其对电压控制双极忆阻器阈值类型模型的性能的影响。Knowm公司。