In the following review, the authors describe how the kinetics of film growth can be controlled in innovative ways to achieve the deposition of conformal, superconformal, area-selective, and ultrasmooth films by low-temperature CVD. Illustrative experimental data and kinetic models are given for the growth of a variety of materials, including transition metals, metal oxides, and metal diborides. Key results are as follows: (i) For precursors that exhibit site blocking on the growth surface, CVD can afford a high degree of conformal coverage on very high aspect ratio features. (ii) The problem of conformal coverage has been solved analytically and presented as a conformal zone diagram. (iii) “Nonconformal” precursor molecules can be made to afford highly conformal films by adding a suitable neutral molecule to enhance surface site blocking. (iv) An inhibitor that adsorbs strongly to the growth material, but not to the substrate surface, can be used to moderate the size distribution of nuclei such that the film is ultrasmooth at coalescence. (v) An inhibitor that binds preferentially to hydroxyl sites on an oxide surface can be used to completely suppress film nucleation and afford area-selective growth. (vi) Superconformal growth, which affords a V-shaped coating and complete fill of a deep trench, can be achieved using one of three approaches, depending on the precursor chemistry. (vii) The science and technology of CVD can further be expanded by the chemical design of new precursors that have a favorable combination of high partial pressure, suitable reactivity at low substrate temperature, and ligand groups that desorb cleanly.

中文翻译：

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通过低温化学气相沉积形成保形，超保形和超光滑薄膜的新策略

在下面的评论中，作者描述了如何以创新的方式控制薄膜生长的动力学，以通过低温CVD实现保形，超保形，区域选择性和超光滑薄膜的沉积。给出了用于多种材料生长的示例性实验数据和动力学模型，包括过渡金属，金属氧化物和金属二硼化物。关键结果如下：（i）对于在生长表面上表现出位阻的前体，CVD可以在非常高的长宽比特征上提供高度的保形覆盖。（ii）保形覆盖问题已通过分析得到解决，并以保形区域图的形式呈现。（iii）通过添加合适的中性分子来增强表面位阻，可以使“非保形”前体分子提供高度保形的薄膜。（iv）可以强烈吸附生长材料而不吸附基质表面的抑制剂，以缓和原子核的尺寸分布，从而使膜在聚结时超光滑。（v）优先与氧化物表面上的羟基位点结合的抑制剂可用于完全抑制膜成核并提供区域选择性生长。（vi）可以使用三种方法中的一种来实现超共形生长，该过程提供了V形涂层并完全填充了深沟槽，具体取决于前驱体的化学性质。（vii）可以通过新前体的化学设计进一步扩展CVD的科学和技术，这些前体具有高分压，低底物温度下合适的反应性和干净脱附的配体基团的良好组合。