A new industrial approach for the production of CuInSe₂ (CISe) absorber layers in a roll-to-roll process is described. This process is used by Sunplugged GmbH and combines magnetron sputtering with thermal coevaporation. A CISe-based device with a conversion efficiency of more than 10% has been fabricated from absorbers grown on polyimide at low temperature. The characteristic properties of a copper-poor ([Cu]/[In] = 0.73) CISe layer, deposited by Sunplugged's industrial process, are compared to those of a state-of-the-art, more copper-rich ([Cu]/[In] = 0.93) layer, grown in a molecular beam epitaxy system at Helmholtz-Zentrum Berlin. The presence of a so called vacancy-compound in low [Cu]/[In] CISe devices exhibiting an increased bandgap energy is visible by external quantum efficiency measurements, Raman scattering, and scaps simulations.

中文翻译：

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工业低温卷对卷CI（G）Se混合溅射共蒸发沉积工艺的新方法

描述了一种以卷对卷工艺生产CuInSe ₂（CISe）吸收层的新工业方法。此过程由Sunplugged GmbH使用，并将磁控溅射与热共蒸发相结合。已经由在低温下在聚酰亚胺上生长的吸收剂制造了转换效率超过10％的基于CISe的器件。将通过Sunplugged的工业工艺沉积的贫铜（[Cu] / [In] = 0.73）CISe层的特性与最先进，更富铜的（[Cu] / [In] = 0.93）层，在柏林Helmholtz-Zentrum的分子束外延系统中生长。通过外部量子效率测量，拉曼散射和scaps模拟，可以看出在低[Cu] / [In] CISe器件中出现了带隙能量增加的所谓空位化合物。