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In Situ Formation of Oxygen Vacancies Achieving Near-Complete Charge Separation in Planar BiVO4 Photoanodes.
Advanced Materials ( IF 27.4 ) Pub Date : 2020-05-14 , DOI: 10.1002/adma.202001385
Songcan Wang 1, 2 , Tianwei He 3 , Peng Chen 2 , Aijun Du 3 , Kostya Ken Ostrikov 3 , Wei Huang 1 , Lianzhou Wang 2
Affiliation  

Despite a suitable bandgap of bismuth vanadate (BiVO4) for visible light absorption, most of the photogenerated holes in BiVO4 photoanodes are vanished before reaching the surfaces for oxygen evolution reaction due to the poor charge separation efficiency in the bulk. Herein, a new sulfur oxidation strategy is developed to prepare planar BiVO4 photoanodes with in situ formed oxygen vacancies, which increases the majority charge carrier density and photovoltage, leading to a record charge separation efficiency of 98.2% among the reported BiVO4 photoanodes. Upon loading NiFeOx as an oxygen evolution cocatalyst, a stable photocurrent density of 5.54 mA cm−2 is achieved at 1.23 V versus the reversible hydrogen electrode (RHE) under AM 1.5 G illumination. Remarkably, a dual‐photoanode configuration further enhances the photocurrent density up to 6.24 mA cm−2, achieving an excellent applied bias photon‐to‐current efficiency of 2.76%. This work demonstrates a simple thermal treatment approach to generate oxygen vacancies for the design of efficient planar photoanodes for solar hydrogen production.

中文翻译:

在平面BiVO4光阳极中实现近乎完全电荷分离的氧空位的原位形成。

尽管有合适的钒酸铋(BiVO 4)带隙用于吸收可见光,但由于主体中的电荷分离效率差,BiVO 4光电阳极中的大多数光生空穴在到达表面进行氧释放反应之前就消失了。在本文中,开发了一种新的硫氧化策略,以制备具有原位形成的氧空位的平面BiVO 4光电阳极,这增加了大多数载流子的密度和光电压,从而在报告的BiVO 4光电阳极中产生了创纪录的98.2%的电荷分离效率。负载NiFeO x 作为析氧助催化剂时,稳定的光电流密度为5.54 mA cm -2相对于可逆氢电极(RHE)在AM 1.5 G光照下在1.23 V时可获得最大电导率。值得注意的是,双光阳极配置进一步提高了高达6.24 mA cm -2的光电流密度,实现了出色的2.76%的施加偏置光子-电流效率。这项工作演示了一种简单的热处理方法,可以产生氧空位,用于设计用于生产太阳能氢的高效平面光阳极。
更新日期:2020-07-01
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