With the application of strain engineering in microelectronics, complex stress states are introduced into advanced semiconductor devices. However, there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor materials. This paper presents an investigation on the 2-axis stress component decoupling of {100} monocrystalline silicon (c-Si) by using oblique backscattering micro-Raman spectroscopy. A spectral-mechanical model was established, and two practicable methods for actual stress decoupling analyses were proposed. The verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.

中文翻译：

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斜向反向散射拉曼光谱法研究{100} c-Si的两轴应力分量解耦

随着应变工程在微电子学中的应用，复杂的应力状态被引入到先进的半导体器件中。然而，对于半导体材料中的复杂应力状态的去耦分析仍然缺乏有效的度量。本文利用斜向反向散射微拉曼光谱技术研究了{100}单晶硅（c-Si）的2轴应力分量解耦。建立了光谱力学模型，提出了两种可行的实际应力解耦分析方法。验证实验证明了本文提出方法的正确性和适用性。