In the present study, hydrogen water was applied to ceria abrasive removal in post-CMP cleaning. The surface of the ceria abrasive was reduced by the hydrogen water from the Ce4+ to Ce3+ state. Reduction of the ceria abrasive can weaken the bonding between ceria and the SiO2 wafer surface. X-ray photoelectron spectroscopy (XPS) and UV–visible observations were utilized to reveal the reduction from Ce4+ to Ce3+ by hydrogen water. Thus, the remaining ceria particles and Ce-ion concentrations were reduced by 70% and 63%, respectively.

中文翻译：

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交流——氢水对CMP后清洗中氧化铈磨料去除的影响

在本研究中，氢水被用于去除 CMP 后清洗中的氧化铈磨料。氧化铈磨料的表面被氢水从Ce4+还原为Ce3+状态。二氧化铈研磨剂的减少会削弱二氧化铈和SiO2晶片表面之间的结合。X 射线光电子能谱 (XPS) 和紫外可见光观察被用来揭示氢水从 Ce4+ 到 Ce3+ 的还原。因此，剩余的二氧化铈颗粒和 Ce 离子浓度分别降低了 70% 和 63%。