A study of GaAs solar cells (SCs) with various quantum-sized objects has been carried out. In0.2Ga0.8As quantum wells, In0.4Ga0.6As quantum well-dots (QWDs), In0.8Ga0.2As and InAs quantum dots have been considered. The increment in photocurrent and the reduction of open-circuit voltage have been calculated using dark IV and spectral characteristics. An analytical model for estimating the efficiency of triple-junction SCs with quantum objects has been described. The calculations have shown that the optimized QWDs have a potential for increasing the efficiency of GaInP/GaAs/Ge SC from 29.8 to 30.8% (AM0, 1 sun) and from 41.6% to 43.1% (AM1.5D, 360 suns).

中文翻译：

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估计使用量子尺寸物体提高 GaInP/GaAs/Ge 多结太阳能电池效率的潜力

已经对具有各种量子尺寸物体的 GaAs 太阳能电池 (SC) 进行了研究。已经考虑了 In0.2Ga0.8As 量子阱、In0.4Ga0.6As 量子阱点 (QWD)、In0.8Ga0.2As 和 InAs 量子点。光电流的增加和开路电压的减少已经使用暗 IV 和光谱特性计算出来。已经描述了用于估计具有量子对象的三结 SCs 的效率的分析模型。计算表明，优化的 QWD 有可能将 GaInP/GaAs/Ge SC 的效率从 29.8% 提高到 30.8%（AM0，1 sun）和从 41.6% 提高到 43.1%（AM1.5D，360 suns）。