Herein, a new heterostructured ultraviolet metal–semiconductor–metal photodetector based on Mg_0.67Ni_0.33O thin film and SrTiO₃ is reported. The metal–semiconductor–metal photodetector comprises a 22 nm epilayer of Mg_0.67Ni_0.33O grown on SrTiO₃ (111) substrate by molecular beam epitaxy. A comparison of responsivities of the Mg_0.67Ni_0.33O–SrTiO₃ photodetector and reference SrTiO₃ photodetector shows that the heterostructured detector has close to an order of magnitude enhanced responsivity in the deep‐ultraviolet region. The responsivity of the Mg_0.67Ni_0.33–SrTiO₃‐based photodetector at 320 nm is 415 mA W⁻¹, with dark current lower than 40 pA at a bias of 10 V. The rise and fall times of Mg_0.67Ni_0.33O–SrTiO₃ photodetector are 10.7 and 8.6 ms, respectively, with the rise time more than two orders of magnitude shorter than the reference SrTiO₃ photodetector.

中文翻译：

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基于SrTiO3上Mg0.67Ni0.33O薄膜的紫外光电探测器

本文报道了一种新型的基于Mg _0.67 Ni _0.33 O薄膜和SrTiO _3的异质结构紫外金属-半导体-金属光电探测器。金属-半导体-金属光电探测器包括通过分子束外延在SrTiO ₃（111）衬底上生长的22 nm镁_0.67 Ni _0.33 O的外延层。Mg _0.67 Ni _0.33 O–SrTiO ₃光电探测器和参考SrTiO ₃光电探测器的响应度比较表明，异结构探测器在深紫外区域的响应度提高了近一个数量级。Mg _0.67 Ni的响应度_0.33 -SrTiO ₃在320nm处基于光检测器是415毫安w ^ ^-1，与暗电流比为40Pa降低在10V的上升的偏压和下降的Mg倍_0.67镍_0.33 O型的SrTiO ₃光检测器是10.7和8.6上升时间分别比ms SrTiO ₃光电探测器短两个数量级。