Characteristics of Dual‐Gate Graphene Thermoelectric Devices Based on Voltage Regulation,Energy Technology

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Characteristics of Dual‐Gate Graphene Thermoelectric Devices Based on Voltage Regulation
Energy Technology ( IF 3.6 ) Pub Date : 2020-05-13 , DOI: 10.1002/ente.201901466
Ning Wang ₁ , Zhihao Ma ₁ , Can Ding ₂ , Hongzhi Jia ₁ , Guorong Sui ₁ , Xiumin Gao ₁

Affiliation

The bandgap, the carrier concentration, and the polarity in graphene can all be controlled by gate voltage, which provides a new opportunity for the study of the regulation of thermoelectric devices. Herein, a dual‐gate thermoelectric device model for graphene with top‐gate and back‐gate structures is proposed. Based on the influence of gate voltage on carrier concentration and the Fermi level, the relationship between the gate voltage and the channel resistance, the Seebeck coefficient, and the conductivity of dual‐gate graphene, thermoelectric devices are established according to the mechanism of carrier transport. The results demonstrate that the optimal voltage window of the Seebeck coefficient, conductivity, and power factor is obtained independently. Compared with the conventional graphene thermoelectric device without the top‐gate structure, the Seebeck coefficient and the power factor for the proposed dual‐gate structure are increased twofold and tenfold, respectively. Herein, a new approach is provided for high‐performance thermoelectric device designs with accurate regulation.

中文翻译：

基于电压调节的双门石墨烯热电器件的特性

带隙，载流子浓度和石墨烯中的极性都可以通过栅极电压控制，这为研究热电器件的调节提供了新的机会。本文提出了一种具有顶栅和背栅结构的石墨烯双栅热电器件模型。根据栅极电压对载流子浓度和费米能级的影响，栅极电压与沟道电阻，塞贝克系数和双栅极石墨烯电导率之间的关系，根据载流子传输机理建立了热电器件。。结果表明，独立获得了最佳塞贝克系数，电导率和功率因数的最佳电压窗口。与没有顶栅结构的传统石墨烯热电器件相比，拟议的双栅极结构的塞贝克系数和功率因数分别增加了两倍和十倍。在此，为具有精确调节的高性能热电设备设计提供了一种新方法。

更新日期：2020-07-02

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