ZnSe₂O₅ nanocrystals with an orthorhombic structure were synthesized by electrochemical deposition into a-SiO₂/n-Si ion track template formed by 200 MeV Xe ion irradiation with the fluence of 10⁷ ions/cm². The lattice parameters determined by the X-ray diffraction and calculated by the CRYSTAL computer program package are very close to each other. It was shown that ZnSe₂O₅ has a direct band gap of 2.8 eV at the Γ-point. In addition, the calculated charge distribution and chemical bonds show that the crystal has an ion-covalent nature. The photoluminescence excited by photons at 300 nm has a low intensity arising mainly due to zinc and oxygen vacancies.

通过电化学沉积到200 MeV Xe离子辐照形成的a-SiO ₂ / n-Si离子径迹模板中，以10 ⁷离子/ cm ²的注量合成了具有正交晶结构的ZnSe ₂ O ₅纳米晶体。由X射线衍射确定并由CRYSTAL计算机程序包计算的晶格参数彼此非常接近。结果表明，ZnSe ₂ O ₅在Γ点的直接带隙为2.8 eV。另外，计算出的电荷分布和化学键表明该晶体具有离子共价性质。由300 nm的光子激发的光致发光强度较低，这主要是由于锌和氧空位引起的。