Abstract Highly efficient blue-emitting halide-passivated QDs with the emission of 445−450 nm were developed. First, we prepared large ZnSe QDs and evaluated their wavelength, but 440 nm was the upper limit. Then, ZnSe1-xTex QDs were synthesized, and thus 410 nm emission was achieved. To improve the quantum yield (QY) and obtain a red-shifted wavelength, repeated ZnSe shell coating, ZnS coating, and halide passivation were conducted. The optimum were ZnSe1-xTex/ZnSe/ZnS QDs with 5% or 2% Te. The final QDs with 5% Te have a higher QY of 81% and the performance of the deep-blue QLEDs (turn-on voltage: 5.13 V, maximum luminance: 3200 cd/m2, maximum current efficiency: 2.73 cd/A, and maximum EQE: 4.06%, CIE: (0.151, 0.056)); however, a long emission tail due to the surface trap will hinder practical application. The QDs with 2% Te have a good emission profile and FWHM of 16 nm, but their QY is slightly lower.

中文翻译：

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高效蓝光ZnSexTe1-x/ZnSe/ZnS量子点的开发及其电致发光应用

摘要 开发了发射波长为 445-450 nm 的高效蓝光卤化物钝化 QD。首先，我们制备了大型 ZnSe QD 并评估了它们的波长，但 440 nm 是上限。然后，合成了 ZnSe1-xTex 量子点，从而实现了 410 nm 的发射。为了提高量子产率 (QY) 并获得红移波长，进行了重复的 ZnSe 壳涂层、ZnS 涂层和卤化物钝化。最佳的是 ZnSe1-xTex/ZnSe/ZnS QDs，含 5% 或 2% Te。具有 5% Te 的最终 QD 具有更高的 81% 的 QY 和深蓝色 QLED 的性能（开启电压：5.13 V，最大亮度：3200 cd/m2，最大电流效率：2.73 cd/A，以及最大 EQE：4.06%，CIE：(0.151, 0.056))；然而，由于表面陷阱导致的长发射尾会阻碍实际应用。