The energy characteristics of the main deuterium (D) traps in CuCrZr alloy samples, which were previously annealed at temperatures of 773, 873, 973 and 1073 K and then exposed to D₂ gas at a pressure of 2.5 × 10⁴ Pa and a temperature of 723 K for 10 h, were studied by thermal desorption spectroscopy. Samples of oxygen free copper (OFC) were also investigated in the same way. For OFC, annealing at 773 K could reduce D retention appreciably. It indicates the temperature of 773 K is high enough to reduce the total D amount trapped by intrinsic defects (i.e. vacancies, dislocations and grain boundaries). However, for CuCrZr alloy, heat treatment does not reduce the D retention significantly until the annealing temperature is higher than 1073 K. Scanning electron microscope (SEM) and energy dispersive spectrometer (EDS) observations show that the density of precipitate particles especially the Zr-rich precipitate particles increase for the 1073 K-annealed one. It suggests the dissolved Zr atoms in the substrate are responsible for the D retention in CuCrZr alloy. D detrapping energy from the dissolved Zr atoms in CuCrZr alloy is estimated to be 0.98 eV from the TDS measurements.

CuCrZr合金样品中主要氘（D）阱的能量特征，这些阱先前已在773、873、973和1073 K的温度下退火，然后在2.5×10 ⁴的压力下暴露于D ₂气体中 通过热解吸光谱法研究了Pa和723 K温度10 h。还以相同的方式研究了无氧铜（OFC）样品。对于OFC，在773 K退火可以显着降低D保留。这表明773 K的温度足够高，可以减少固有缺陷（例如，空位，位错和晶界）捕获的总D量。但是，对于CuCrZr合金，直到退火温度高于1073 K时，热处理都不会显着降低D的保留。扫描电子显微镜（SEM）和能量分散光谱仪（EDS）的观察结果表明，析出颗粒的密度，尤其是Zr-对于1073 K退火的颗粒，富集的沉淀颗粒增加。这表明基底中溶解的Zr原子是造成CuCrZr合金中D保留的原因。根据TDS测量，CuCrZr合金中溶解的Zr原子的D脱陷能估计为0.98 eV。