Abstract A flexible, self-powered, high-performance photodetector with the Ni/perovskite nanowires/Al structure has been fabricated successfully. CH3NH3PbI3 nanowires were synthesized by a simple spin-coating method at the appropriate temperature on a flexible substrate of polyimide (PI) film. The channel length between Ni-Al electrodes is about 15 μm. A built-in electric field has been established in the asymmetric device, which can effectively separate electron-hole pairs. The as-fabricated photodetector exhibited a high sensitivity from 405 nm to 808 nm. The external quantum efficiency (EQE) of the device is 33.7% at 405 nm with 0 V bias. Note that the device showed good performances of high sensitivity for detecting low incident power density. In addition, a responsivity of 0.227 A cm−2 was achieved under the incident light power of 1 × 10−8 W cm−2. The photodetector showed a high on/off ratio of 147, fast response speed of tens of microseconds, and excellent flexibility with a slight variation of photocurrent after bending test. These results create new opportunities for constructing low-cost, simple-process and high-performance photodetectors.

中文翻译：

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基于钙钛矿纳米线和镍铝电极的自供电柔性光电探测器

摘要 已成功制造出具有 Ni/钙钛矿纳米线/Al 结构的柔性、自供电、高性能光电探测器。CH3NH3PbI3 纳米线是通过简单的旋涂方法在适当的温度下在聚酰亚胺 (PI) 薄膜的柔性基板上合成的。Ni-Al 电极之间的通道长度约为 15 μm。在不对称器件中建立了内置电场，可以有效地分离电子-空穴对。制造的光电探测器在 405 nm 至 808 nm 范围内表现出高灵敏度。该器件的外部量子效率 (EQE) 在 405 nm 处为 33.7%，偏置为 0 V。请注意，该设备在检测低入射功率密度方面表现出良好的高灵敏度性能。此外，响应度为 0。在 1 × 10-8 W cm-2 的入射光功率下实现了 227 A cm-2。该光电探测器表现出147的高开/关比，数十微秒的快速响应速度，以及弯曲测试后光电流略有变化的优异柔韧性。这些结果为构建低成本、简单工艺和高性能的光电探测器创造了新的机会。