Amorphous silicon carbide (a-SiC) films of thickness 50–300 nm are deposited by a single composite target magnetron sputtering process. Metal–SiC–metal structures are fabricated to demonstrate resistive switching. The top metal electrode is Cu, Pt or Ag and the bottom electrode is fixed as Au. Reversible resistive switching from high to low resistance states is observed for SiC films at voltages between 1 and 5 V. The interface between metal electrode and a-SiC films plays a significant role in achieving optimal switching performance. Resistance OFF/ON ratios of $$10^{8}$$ 10 8 , retention times $${>}10^{4}$$ > 10 4 s and endurance of 50 cycles are achieved in the best devices. Cross-sectional scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy are employed to understand the mechanism of device operation. Raman spectroscopy indicates the formation of nanocrystalline graphite in these devices after a few cycles of operation.

中文翻译：

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单复合磁控溅射沉积法制备非晶碳化硅薄膜的电阻转换行为

厚度为 50-300 nm 的非晶碳化硅 (a-SiC) 薄膜通过单复合靶磁控溅射工艺沉积。制造金属-碳化硅-金属结构以展示电阻开关。顶部金属电极为 Cu、Pt 或 Ag，底部电极固定为 Au。在 1 到 5 V 的电压下观察到 SiC 膜从高电阻状态到低电阻状态的可逆电阻切换。金属电极和 a-SiC 膜之间的界面在实现最佳切换性能方面起着重要作用。在最佳器件中实现了 $$10^{8}$$ 10 8 的电阻 OFF/ON 比率、保留时间 $${>}10^{4}$$ > 10 4 s 和 50 个周期的耐久性。采用横截面扫描电子显微镜、拉曼光谱和 X 射线光电子能谱来了解器件操作的机制。