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Board-Level Ku-Band Power Amplifier: Design and Challenges
IETE Journal of Research ( IF 1.5 ) Pub Date : 2020-03-25 , DOI: 10.1080/03772063.2020.1742804
Hemant Kumar Singhal 1, 2 , Karun Rawat 1
Affiliation  

ABSTRACT

This paper describes the challenges in the design of board-level Ku-band power amplifier (PA) using the hybrid-MIC technology. The selection of laminates, connectors, cables and RF components, such as DC feed and DC block, is examined from the perspective of Ku-band PA designers. Other key challenges, such as die mounting and wire bonding, are also discussed. Die mounting and wire bonding are critical phenomena and they have a great impact on the working of PA at high frequencies. After several trials, successful die mounting has been achieved and a methodology for reliable die mounting and wire bonding has been proposed. With the help of investigation done for the design of PA at the high operating frequency, a first board-level power amplifier at 17 GHz has been designed using a 250 nm bare die device with a 400 MHz frequency band.



中文翻译:

板级 Ku 波段功率放大器:设计与挑战

摘要

本文描述了使用混合 MIC 技术设计板级 Ku 波段功率放大器 (PA) 的挑战。层压板、连接器、电缆和射频元件(如直流馈电和直流阻隔)的选择是从 Ku 波段 PA 设计人员的角度进行检查的。还讨论了其他关键挑战,例如芯片安装和引线键合。芯片安装和引线键合是关键现象,它们对 PA 在高频下的工作有很大影响。经过多次试验,已成功实现芯片安装,并提出了一种可靠的芯片安装和引线键合方法。在对高工作频率下 PA 设计的调查研究的帮助下,使用具有 400 MHz 频带的 250 nm 裸片器件设计了第一个 17 GHz 板级功率放大器。

更新日期:2020-03-25
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