ABSTRACT In this manuscript, the impact of dielectric pocket on analog/radio-frequency (RF) performances of SOI-TFET is investigated. The inclusion of a dielectric pocket to SOI-TFET has been found to have great potential in eliminating the ambipolarity when Tunnel FET is biased at a higher negative gate voltage. With 2-D numerical simulations, it is demonstrated that inclusion of a dielectric pocket on partially scaled drain region improves the analog/RF performances of SOI-TFET such as gate-to-drain capacitance, output resistance, gain-bandwidth product and cut-off frequency. Furthermore, it is shown that a high-k dielectric pocket (HfO2) provides more reduction in ambipolar conduction compared to a low-k dielectric pocket (SiO2). But, analog/RF performance parameters are observed superior in SOI-TFET with low-k dielectric pocket compared to conventional and high-k dielectric pocket SOI-TFET. Additionally, to demonstrate the advantage of using a dielectric pocket to SOI-TFET in circuit applications, we compare the transient response of conventional SOI-TFET with low and high-k dielectric pocket SOI TFET.

中文翻译：

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使用电介质袋改善 SOI TFET 的模拟/射频性能

摘要 在本手稿中，研究了电介质袋对 SOI-TFET 的模拟/射频 (RF) 性能的影响。当隧道 FET 偏置在较高的负栅极电压时，已发现将电介质袋包含在 SOI-TFET 中具有消除双极性的巨大潜力。二维数值模拟表明，在部分缩放的漏区上包含电介质袋可以改善 SOI-TFET 的模拟/RF 性能，例如栅漏电容、输出电阻、增益带宽积和切割关闭频率。此外，结果表明，与低 k 介电袋 (SiO2) 相比，高 k 介电袋 (HfO2) 可提供更多的双极传导降低。但，与传统和高 k 介电袋 SOI-TFET 相比，在具有低 k 介电袋的 SOI-TFET 中观察到模拟/RF 性能参数优越。此外，为了证明在电路应用中使用电介质袋代替 SOI-TFET 的优势，我们比较了传统 SOI-TFET 与低和高 k 电介质袋 SOI TFET 的瞬态响应。