ABSTRACT This paper presents a new expression for the capacitance model based on ligament efficiency. The parallel plate capacitance is the first component derived based on the percentage of ligament efficiency and the second component which is fringing field capacitance is the combination of both existing Yang’s fringing field developed by the perforations and Meji’s capacitance model developed for fringing field due to sidewalls of parallel plates. The proposed model is the combination of three components and enhances accuracy to estimate the total capacitance. The proposed model contributes up to 10% and 2% of the fringing field in upstate capacitance and downstate conditions. The proposed capacitance model is validated by designing in FEM tool to obtain the deviation between the results and respective deviation is expressed as the percentage of error which results from 0.013% to 2.10% in up and downstate conditions. The error percentages are analysed for different ligament efficiencies to obtain the optimum value to enhance the performance of the switch.

中文翻译：

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通过结合边缘场效应改进的阶梯结构电容式射频 MEMS 开关的拟议电容模型

摘要 本文提出了一种基于韧带效率的电容模型的新表达式。平行板电容是基于韧带效率百分比导出的第一个分量，第二个分量是边缘场电容，它是由穿孔形成的现有杨氏边缘场和 Meji 为边缘场开发的电容模型的组合平行板。所提出的模型是三个组件的组合，提高了估计总电容的准确性。在上态电容和下态条件下，所提出的模型贡献了高达 10% 和 2% 的边缘场。通过在 FEM 工具中设计，对所提出的电容模型进行验证，以获得结果之间的偏差，各自的偏差表示为在上下状态下从 0.013% 到 2.10% 的误差百分比。分析不同韧带效率的误差百分比以获得最佳值以提高开关的性能。