ABSTRACT This paper presents a new structure of Metal Semiconductor Field Effect Transistor (MESFET) for high power applications. One of the problems that we face in the design of the MESFET devices is that in most cases, the increase of breakdown voltage is accompanied by a decrease in the saturation drain current. Our aim to propose this structure is to improve these two parameters simultaneously. Using the insulator region under the sides of the gate (IR) and the hide field plate (HFP) in the buried oxide (BOX) are the fundamental solution for improving these parameters. We named the proposed structure as spread potential contours towards the drain MESFET (SPC-MESFET). By applying the proposed structure, the drain current and the breakdown voltage improve 20 and 27 percent compared to a conventional structure (C-MESFET), respectively. Therefore, the proposed device has a higher maximum power density than the C-MESFET structure. Also, this idea reduces the gate capacitance and thus the frequency characteristics such as cut off frequency (fT), maximum oscillation frequency (fmax), and Maximum Available Gain (MAG) improve in comparison with the C-MESFET structure.

中文翻译：

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一种新型 SOI MESFET 可将潜在轮廓传播到漏极

摘要 本文介绍了一种用于高功率应用的金属半导体场效应晶体管 (MESFET) 的新结构。我们在设计 MESFET 器件时面临的问题之一是，在大多数情况下，击穿电压的增加伴随着饱和漏电流的降低。我们提出这种结构的目的是同时改进这两个参数。使用栅极 (IR) 侧面下方的绝缘体区域和掩埋氧化物 (BOX) 中的隐藏场板 (HFP) 是改善这些参数的基本解决方案。我们将提议的结构命名为向漏极 MESFET (SPC-MESFET) 扩展电位轮廓。通过应用所提出的结构，与传统结构 (C-MESFET) 相比，漏极电流和击穿电压分别提高了 20% 和 27%。所以，所提出的器件具有比 C-MESFET 结构更高的最大功率密度。此外，与 C-MESFET 结构相比，这种想法降低了栅极电容，从而改善了截止频率 (fT)、最大振荡频率 (fmax) 和最大可用增益 (MAG) 等频率特性。