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TCAD-Based Assessment of Dual-Gate MISHEMT with Sapphire, SiC, and Silicon Substrate
IETE Technical Review ( IF 2.5 ) Pub Date : 2019-12-22 , DOI: 10.1080/02564602.2019.1699455 Preeti Singh 1 , Vandana Kumari 2 , Manoj Saxena 3 , Mridula Gupta 1
IETE Technical Review ( IF 2.5 ) Pub Date : 2019-12-22 , DOI: 10.1080/02564602.2019.1699455 Preeti Singh 1 , Vandana Kumari 2 , Manoj Saxena 3 , Mridula Gupta 1
Affiliation
ABSTRACTThis paper examines the DC performance of Dual-Gate MISHEMT with different substrate material such as sapphire, silicon carbide SiC, and silicon. The performance parameters evaluated are th...
中文翻译：
基于 TCAD 的蓝宝石、碳化硅和硅衬底双栅极 MISHEMT 评估
摘要本文研究了采用不同衬底材料（如蓝宝石、碳化硅 SiC 和硅）的双栅极 MISHEMT 的直流性能。评估的性能参数是...
更新日期：2019-12-22
中文翻译：
基于 TCAD 的蓝宝石、碳化硅和硅衬底双栅极 MISHEMT 评估
摘要本文研究了采用不同衬底材料（如蓝宝石、碳化硅 SiC 和硅）的双栅极 MISHEMT 的直流性能。评估的性能参数是...
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