This paper reviews the AlGaN/GaN HEMT devices with electric field modulation effects and proposes a uniform two-dimensional model of this type of devices. The surface electric field can be optimized to improve the breakdown voltage by the electric field modulation based on changing the charge distribution inside the device. And four AlGaN/GaN HEMTs with electric field modulation effects have been discussed: AlGaN/GaN HEMT with the etched AlGaN layer, AlGaN/GaN HEMT with partial GaN cap layer, the RESURF AlGaN/GaN HEMT and AlGaN/GaN HEMT with partial silicon doping. On the basis of the above analyses, a uniform analytical model of the surface electric field and potential distribution are obtained by reasonable boundary conditions and the two-dimensional Poisson equation. The simulation results agree well with the analytical results, and it verify the correctness of theoretical analysis and the validity of the model. In addition, AlGaN/GaN HEMT with etched AlGaN layer and AlGaN/GaN HEMT with partial GaN cap layer were fabricated and tested. The experimental results indicated that the novel AlGaN/GaN HEMT with electric field modulation effects is superior to conventional HEMT, which further proves the accuracy of the theoretical model. This uniform model can provide valuable reference for the modelling of other devices.

中文翻译：

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具有电场调制效应的AlGaN/GaN HEMT的分析模型

本文回顾了具有电场调制效应的 AlGaN/GaN HEMT 器件，并提出了此类器件的统一二维模型。通过基于改变器件内部电荷分布的电场调制，可以优化表面​​电场以提高击穿电压。并讨论了四种具有电场调制效应的 AlGaN/GaN HEMT：具有蚀刻 AlGaN 层的 AlGaN/GaN HEMT、具有部分 GaN 盖层的 AlGaN/GaN HEMT、RESURF AlGaN/GaN HEMT 和具有部分硅掺杂的 AlGaN/GaN HEMT . 在上述分析的基础上，通过合理的边界条件和二维泊松方程，得到了表面电场和电位分布的均匀解析模型。模拟结果与分析结果吻合良好，验证了理论分析的正确性和模型的有效性。此外，还制造并测试了带有蚀刻 AlGaN 层的 AlGaN/GaN HEMT 和带有部分 GaN 盖层的 AlGaN/GaN HEMT。实验结果表明，具有电场调制效应的新型AlGaN/GaN HEMT优于传统HEMT，进一步证明了理论模型的准确性。这种统一的模型可以为其他设备的建模提供有价值的参考。进一步证明了理论模型的准确性。这种统一的模型可以为其他设备的建模提供有价值的参考。进一步证明了理论模型的准确性。这种统一的模型可以为其他设备的建模提供有价值的参考。