ABSTRACT In this paper, two new structures are proposed for diode-assisted extended-boost continuous-current quasi-Z-source inverter (qZS). In the proposed structures to reduce the capacitors and diodes voltage stresses, a new switched inductor structure is used. Voltage gains of inverters in the proposed and conventional topologies have the same magnitude. Moreover, the startup inrush current in the proposed topologies is decreased. In this article, at first, the proposed Z-source inventers are investigated to find out their governing relations. Then, the proposed Z-source inverters are compared with the conventional ones by simulating them to assess their performance efficiency. Next, applying the simple boost pulse width modulation the simulation is carried out in PSCAD/EMTDC software. To evaluate the obtained results, the prototypes of the proposed inverters with 48Vdc input voltage are used.

中文翻译：

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改进的二极管辅助准 ZSI，降低了二极管和电容器上的电压应力

摘要 在本文中，提出了二极管辅助扩展升压连续电流准 Z 源逆变器 (qZS) 的两种新结构。在所提出的降低电容器和二极管电压应力的结构中，使用了一种新的开关电感器结构。在所提出的和传统的拓扑结构中逆变器的电压增益具有相同的幅度。此外，所提议的拓扑结构中的启动浪涌电流降低了。在本文中，首先对提议的 Z 源发明人进行调查，以找出他们的统治关系。然后，通过模拟所提出的 Z 源逆变器与传统逆变器进行比较，以评估其性能效率。接下来，应用简单的升压脉冲宽度调制，在 PSCAD/EMTDC 软件中进行仿真。为了评估获得的结果，