ABSTRACT

In this paper, we presented three μ-ring resonator structures based on the standard strip, slot and hybrid plasmonic waveguides based on the SOI platform. A standard strip waveguide is formed by depositing a silicon core on a silica substrate. Whereas the slot waveguide is tailored by keeping a narrow air gap between two silicon strip waveguides. Finally, the hybrid plasmonic waveguide is composed of Metal-Air-Silicon structure, where the E-field is significantly enhanced in the narrow air gap. The ring radius is kept at 1.5 μm for the three designs. The transmission spectrum and E-field distribution of these structures are simulated using the finite element method (FEM). Silicon strip waveguide-based ring resonators are easy to fabricate but their sensitivity is quite low as compared to the other two designs. μ-ring resonator based on hybrid plasmonic waveguide shows the best sensitivity of 333.3 nm/RIU. While, slot waveguide based μ-ring resonator showed the best performance in the quality factor, the figure of merits and limit of detection. We believe that this comparative study will facilitate the researchers to choose the suitable waveguide design for ring resonators depending on their preferred application and fabrication technology available.

摘要

在本文中，我们提出了基于 SOI 平台的标准条形、缝隙和混合等离子体波导的三种 μ 环谐振器结构。标准条形波导是通过在二氧化硅衬底上沉积硅芯形成的。而狭缝波导是通过在两个硅带波导之间保持狭窄的气隙来定制的。最后，混合等离子体波导由金属-空气-硅结构组成，其中 E 场在狭窄的气隙中显着增强。三种设计的环半径保持在 1.5 μm。使用有限元方法 (FEM) 模拟这些结构的透射光谱和电场分布。基于硅带波导的环形谐振器易于制造，但与其他两种设计相比，其灵敏度非常低。基于混合等离子体波导的 μ 环谐振器显示出 333.3 nm/RIU 的最佳灵敏度。而基于缝隙波导的μ环谐振器在品质因数、品质因数和检测限方面表现最佳。我们相信，这项比较研究将有助于研究人员根据他们的首选应用和可用制造技术为环形谐振器选择合适的波导设计。